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Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 10.00.3 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.50.1 1.5max. 1.1max. 10.5min. 2.0 0.80.1 0.5max. 2.540.3 s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 50 20 40 5 8 4 25 1.3 150 -55 to +150 Unit V 2SD1538 2SD1538A 2SD1538 5.080.5 1 2 3 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 6.00.3 1.5-0.4 Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature A 2.0 3.0-0.2 A W 4.40.5 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.080.5 C C 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1538 2SD1538A 2SD1538 2SD1538A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 5V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = - 0.2A, VCC = 20V 120 0.2 0.5 0.1 20 40 45 90 260 0.5 1.5 V V MHz s s s min typ max 50 50 50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 4.40.5 14.70.5 Emitter to base voltage V 10.00.3 emitter voltage 2SD1538A V +0.4 +0 1 Power Transistors PC -- Ta 40 6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=1.3W) TC=25C 5 IB=60mA 50mA 40mA 30mA 3 20mA 2 10mA 1 5mA 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 2SD1538, 2SD1538A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 TC=100C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C VCE(sat) -- IC Collector power dissipation PC (W) 35 30 25 20 15 10 5 0 (2) (3) (4) (1) Collector current IC (A) 4 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 10000 IC/IB=10 hFE -- IC 10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT -- IC VCE=5V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 1000 300 100 -25C 30 10 3 1 0.1 TC=100C 25C 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Transition frequency fT (MHz) 30 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf -- IC 10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=20V TC=25C tstg Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C Switching time ton,tstg,tf (s) 3 Collector current IC (A) 10 ICP IC 3 300ms 1 0.3 0.1 0.03 10ms t=1ms 1 0.3 ton tf 0.1 0.03 0.01 0 1 2 3 4 5 6 7 8 0.01 1 3 10 30 2SD1538A 100 2SD1538 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 102 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) 2SD1538, 2SD1538A Thermal resistance Rth(t) (C/W) (2) 10 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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