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 Power Transistors
2SD1538, 2SD1538A
Silicon NPN epitaxial planar type
For low-voltage switching Complementary to 2SB1070 and 2SB1070A
10.00.3
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
1.50.1
1.5max.
1.1max.
10.5min.
2.0
0.80.1
0.5max.
2.540.3
s
Absolute Maximum Ratings (TC=25C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 50 20 40 5 8 4 25 1.3 150 -55 to +150 Unit V 2SD1538 2SD1538A 2SD1538
5.080.5 1 2 3
Collector to base voltage Collector to
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
8.50.2 6.00.3
1.5-0.4
Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
A
2.0
3.0-0.2
A W
4.40.5
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.080.5
C C
1 2 3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1538 2SD1538A 2SD1538 2SD1538A
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 5V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = - 0.2A, VCC = 20V 120 0.2 0.5 0.1 20 40 45 90 260 0.5 1.5 V V MHz s s s min typ max 50 50 50 Unit A A V
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
4.40.5
14.70.5
Emitter to base voltage
V
10.00.3
emitter voltage 2SD1538A
V
+0.4
+0
1
Power Transistors
PC -- Ta
40 6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=1.3W) TC=25C 5 IB=60mA 50mA 40mA 30mA 3 20mA 2 10mA 1 5mA 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12
2SD1538, 2SD1538A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=10 30 10 3 1 TC=100C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C
VCE(sat) -- IC
Collector power dissipation PC (W)
35 30 25 20 15 10 5 0 (2) (3) (4) (1)
Collector current IC (A)
4
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100 10000 IC/IB=10
hFE -- IC
10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03
fT -- IC
VCE=5V f=10MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C
1000 300 100 -25C 30 10 3 1 0.1 TC=100C 25C
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Transition frequency fT (MHz)
30
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton, tstg, tf -- IC
10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=20V TC=25C tstg
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C
Switching time ton,tstg,tf (s)
3
Collector current IC (A)
10 ICP IC 3 300ms 1 0.3 0.1 0.03 10ms t=1ms
1
0.3
ton tf
0.1
0.03
0.01 0 1 2 3 4 5 6 7 8
0.01 1 3 10
30
2SD1538A
100
2SD1538
300
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
102 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1)
2SD1538, 2SD1538A
Thermal resistance Rth(t) (C/W)
(2) 10
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3


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